Selenium-Doped Silicon-on-Insulator Waveguide Photodetector With Enhanced Sensitivity at 1550 nm

This letter describes the fabrication and characterization of a silicon-on-insulator all silicon rib waveguide photodetector with sensitivity at 1550 nm. Response at the subbandgap wavelength is provided through the introduction of deep levels via Se ion implantation. Se ions were implanted into the...

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Bibliographic Details
Published in:IEEE photonics technology letters 2011-10, Vol.23 (20), p.1517-1519
Main Authors: Mao, Xue, Han, Peide, Gao, Lipeng, Mi, Yanhong, Hu, Shaoxu, Fan, Yujie, Zhao, Chunhua, Wang, Qiming
Format: Article
Language:English
Subjects:
Deep level
Ion implantation
Optical sensors
Optical waveguides
Photoconductivity
photodetector
Photodetectors
Photonics
responses at subbandgap wavelength
selenium ion implantation
Silicon
silicon waveguide
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Summary:This letter describes the fabrication and characterization of a silicon-on-insulator all silicon rib waveguide photodetector with sensitivity at 1550 nm. Response at the subbandgap wavelength is provided through the introduction of deep levels via Se ion implantation. Se ions were implanted into the waveguide using an ion beam energy of 240 keV at a dose of 3×10 15 cm -2 . The most efficient device has a responsivity of 25 mA/W at 3 V reverse bias. The fabrication is fully compatible with standard complementary metal-oxide-semiconductor processes.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2163704