Gated diode in breakdown voltage collapse regime - A test vehicle for oxide characterization

A new method for oxide characterization, based on flat-band voltage shift direct measurement is presented. This opportunity appears in the breakdown voltage collapse, for a gated diode operated in the common-cathode configuration. Additionally, the proposed method outfits uniform conditions for volt...

Full description

Saved in:
Bibliographic Details
Main Authors: Rusu, Adrian, Badila, M., Rusu, Alexandru
Format: Conference Proceeding
Language:English
Subjects:
breakdown voltage collapse
Current measurement
Flat-band voltage shift
gated-diode
Junctions
Logic gates
Semiconductor device measurement
Semiconductor diodes
Temperature measurement
Voltage measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new method for oxide characterization, based on flat-band voltage shift direct measurement is presented. This opportunity appears in the breakdown voltage collapse, for a gated diode operated in the common-cathode configuration. Additionally, the proposed method outfits uniform conditions for voltage drop across the oxide and carrier multiplication.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2011.5976875