Bridging design and manufacture of analog/mixed-signal circuits in advanced CMOS

We present device and circuit characterization resulting from technology/design co-development to improve the design and manufacture of analog/mixed-signal (AMS) circuits in processors. We introduce I D -based MOSFET transconductance measurements and a new measurement of drain saturation margin at r...

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Bibliographic Details
Main Authors: Jia Feng, Loke, A. L. S., Tin Tin Wee, Lackey, C. O., Okada, L. A., Schwan, C. T., Mantei, T., Morgan, J. H., Herden, M. M., Cooper, J. G., Zhi-Yuan Wu, Jung-Suk Goo, Xin Li, Icel, A. B., Bair, L. A., Fischette, D. M., Doyle, B. A., Fang, E. S., Leary, B. M., Krishnan, S.
Format: Conference Proceeding
Language:English
Subjects:
Electrical resistance measurement
FETs
MOS devices
Resistance
Temperature measurement
USA Councils
Voltage measurement
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Summary:We present device and circuit characterization resulting from technology/design co-development to improve the design and manufacture of analog/mixed-signal (AMS) circuits in processors. We introduce I D -based MOSFET transconductance measurements and a new measurement of drain saturation margin at realistic analog biasing. We also describe routinely monitored scribe lane replicas of key AMS passives and circuits. Such measurements enable construction and validation of compact models better suited to AMS needs than those historically tailored for logic design.
ISSN:0743-1562