From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

Based on detailed understanding of behavior and statistics of individual defects, a new methodology to predict the BTI lifetime distributions in deeply scaled FETs was presented. Moreover, the sources of time dependent variability was identified, some of which can be addressed technologically.

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Bibliographic Details
Main Authors: Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P. J., Grasser, T., Hoffmann, T. Y., Groeseneken, G.
Format: Conference Proceeding
Language:English
Subjects:
Dielectrics
Exponential distribution
FETs
Logic gates
Reliability
Stress
Very large scale integration
Online Access:Request full text
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Description
Summary:Based on detailed understanding of behavior and statistics of individual defects, a new methodology to predict the BTI lifetime distributions in deeply scaled FETs was presented. Moreover, the sources of time dependent variability was identified, some of which can be addressed technologically.
ISSN:0743-1562