Photoresponse of Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e. 85 °C) hydrothermal method. The proposed devices demonstrated the high field-effect mobility of 9.07 cm 2 /V·s, low thr...

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Main Authors: Po-Yu Yang, I-Che Lee, Chia-Tsung Chang, Chao-Lung Wang, Hung-Hsien Li, Yu-Chin Huang, Chun-Yu Wu, Yin-Chang Wei, Huang-Chung Cheng, Jyh-Liang Wang, Wei-Chih Tsai
Format: Conference Proceeding
Language:English
Subjects:
Grain boundaries
Green products
hydrothermal method
Lighting
Logic gates
Thin film transistors
thin-film transistors (TFTs)
Zinc oxide
zinc oxide (ZnO)
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Summary:Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e. 85 °C) hydrothermal method. The proposed devices demonstrated the high field-effect mobility of 9.07 cm 2 /V·s, low threshold voltage of 2.25 V, high on/off current ratio above 10 6 , and superior current drivability, attributed to the high-quality ZnO channel with single grain boundary. Moreover, a stable and repeatable operation of dynamic photoresponse is observed for the location-controlled hydrothermally grown ZnO BG-TFTs.
ISSN:2159-3523
DOI:10.1109/INEC.2011.5991667