Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors

The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs). Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveili...

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Bibliographic Details
Main Authors: Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, S., May, P. W.
Format: Conference Proceeding
Language:English
Subjects:
Diamond-like carbon
FETs
Logic gates
Ohmic contacts
Performance evaluation
Resistance
Transconductance
Online Access:Request full text
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Summary:The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs). Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveiling the potential of this exotic material system as a viable and competitive high power and high frequency device technology.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2011.5994454