A simple method for optocouplers selection in the frame of space applications

Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a preliminary result, diode's degradations can be predi...

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Bibliographic Details
Main Authors: Peyre, D., Binois, C., Mendenhall, M. H., Weller, R. A., Mangeret, R., Salvaterra, G., Montay, G., Beutier, T., Beaumel, M., Sorensen, R. H., Poivey, C.
Format: Conference Proceeding
Language:English
Subjects:
CTR
Degradation
Energy loss
GEANT4
minority carriers lifetime
NIEL
Optocouplers
Protons
Radiation effects
Silicon
Transistors
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Summary:Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a preliminary result, diode's degradations can be predicted and only depend on the initial minority carrier lifetime τ rr0 and not the technology.
ISSN:0379-6566
DOI:10.1109/RADECS.2009.5994685