Manufacturable InP-based HBT technology for low voltage millimeter-wave and microwave communications

A manufacturable InAlAs/InGaAs HBT and MMIC technology was developed for low voltage operation of communications. Materials quality control was achieved through photoreflectance technique, while critical device parameters were used in monitoring process uniformity and reproducibility. A few broadban...

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Bibliographic Details
Main Authors: Tran, L.T., Cowles, J.C., Yang, L.W., Block, T.R., Grossman, P.C., Kobayashi, K.W., Wojtowicz, M., Oki, A.K., Steit, D.C., Elliott, J.H., Callejo, L.G., Yen, H.C., Rezek, E.D.
Format: Conference Proceeding
Language:English
Subjects:
Broadband amplifiers
Condition monitoring
Heterojunction bipolar transistors
Indium compounds
Indium gallium arsenide
Low voltage
Manufacturing
MMICs
Quality control
Reproducibility of results
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Summary:A manufacturable InAlAs/InGaAs HBT and MMIC technology was developed for low voltage operation of communications. Materials quality control was achieved through photoreflectance technique, while critical device parameters were used in monitoring process uniformity and reproducibility. A few broadband MMICs and linear amplifiers based on statistical SPICE modeling in design accomplished new performance records, and InP-based power HBTs demonstrated promising power performance at L- and K-band frequencies.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600072