Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: theory and experiments

We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAs/InGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower va...

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Bibliographic Details
Main Authors: Putnam, C.S., Somerville, M.H., del Alamo, J.A., Chao, P.C., Duh, K.G.
Format: Conference Proceeding
Language:English
Subjects:
Doping
HEMTs
Indium compounds
Indium gallium arsenide
Insulation
MODFETs
Semiconductor process modeling
Structural engineering
Temperature dependence
Tunneling
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Summary:We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAs/InGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower values of the extrinsic sheet carrier concentration (n/sub s/). Structural parameters such as the insulator thickness and top-to-bottom delta doping ratio have little effect on BV if n/sub s/ is held constant. These results are consistent with an extension of a new tunneling model for breakdown in HEMTs to include thermionic-field emission.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600091