Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates

A highly reliable AlInAs/InGaAs high electron mobility transistor with the projected lifetime of 10/sup 6/ hours at 125/spl deg/C is developed. The gate electrode sinking is eliminated by adopting molybdenum gate contact metal, and the carrier passivation is controlled by eliminating the extrinsic f...

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Main Authors: Ishida, T., Yamamoto, Y., Hayafuji, N., Miyakuni, S., Hattori, R., Ishikawa, T., Mitsui, Y.
Format: Conference Proceeding
Language:English
Subjects:
Contamination
Degradation
Electrodes
Failure analysis
HEMTs
Indium gallium arsenide
Life estimation
Life testing
Microwave transistors
MODFETs
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creator Ishida, T.
Yamamoto, Y.
Hayafuji, N.
Miyakuni, S.
Hattori, R.
Ishikawa, T.
Mitsui, Y.
description A highly reliable AlInAs/InGaAs high electron mobility transistor with the projected lifetime of 10/sup 6/ hours at 125/spl deg/C is developed. The gate electrode sinking is eliminated by adopting molybdenum gate contact metal, and the carrier passivation is controlled by eliminating the extrinsic fluorine containing processes. The experimental results and theoretical calculation indicate the present reliability is limited by the intrinsic fluorine contamination from the air.
doi_str_mv 10.1109/ICIPRM.1997.600093
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ispartof Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.201-204
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Contamination
Degradation
Electrodes
Failure analysis
HEMTs
Indium gallium arsenide
Life estimation
Life testing
Microwave transistors
MODFETs
title Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates
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