Passivation of InP-based HBTs for high bit rate circuit applications

We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double heterojunction InP/InGaAs HBT fabrication process...

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Bibliographic Details
Main Authors: Caffin, D., Bricard, L., Courant, J.L., How Kee Chun, L.S., Lescaut, B., Duchenois, A.M., Meghelli, M., Benchimol, J.L., Launay, P.
Format: Conference Proceeding
Language:English
Subjects:
Bit rate
Circuits
Degradation
Fabrication
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
Passivation
Polyimides
Silicon
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Summary:We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double heterojunction InP/InGaAs HBT fabrication process, including polyimide passivation and planarization, has been assembled, allowing us to realize high bit-rate circuits, such as a 36 Gb/s 2:1 multiplexer.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600252