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Passivation of InP-based HBTs for high bit rate circuit applications

We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double heterojunction InP/InGaAs HBT fabrication process...

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Main Authors:	Caffin, D., Bricard, L., Courant, J.L., How Kee Chun, L.S., Lescaut, B., Duchenois, A.M., Meghelli, M., Benchimol, J.L., Launay, P.
Format:	Conference Proceeding
Language:	English
Subjects:	Bit rate Circuits Degradation Fabrication Heterojunction bipolar transistors Indium gallium arsenide Indium phosphide Passivation Polyimides Silicon
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creator	Caffin, D. Bricard, L. Courant, J.L. How Kee Chun, L.S. Lescaut, B. Duchenois, A.M. Meghelli, M. Benchimol, J.L. Launay, P.
description	We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double heterojunction InP/InGaAs HBT fabrication process, including polyimide passivation and planarization, has been assembled, allowing us to realize high bit-rate circuits, such as a 36 Gb/s 2:1 multiplexer.
doi_str_mv	10.1109/ICIPRM.1997.600252
format	conference_proceeding
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issn	1092-8669
language	eng
recordid	cdi_ieee_primary_600252
source	IEEE Xplore All Conference Series
subjects	Bit rate Circuits Degradation Fabrication Heterojunction bipolar transistors Indium gallium arsenide Indium phosphide Passivation Polyimides Silicon
title	Passivation of InP-based HBTs for high bit rate circuit applications
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