Effects of TMAH Treatment on Device Performance of Normally Off \hbox\hbox/\hbox MOSFET

Normally off Al 2 O 3 /GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as a postgate-recess process. The TMAH-treated device with a gate length of 2.5 μm exhibited excellent device performances, such as a threshold voltage of 3.5 V, a maximum drain cur...

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Bibliographic Details
Published in:IEEE electron device letters 2011-10, Vol.32 (10), p.1376-1378
Main Authors: Kim, Ki-Won, Jung, Sung-Dal, Kim, Dong-Seok, Kang, Hee-Sung, Im, Ki-Sik, Oh, Jae-Joon, Ha, Jong-Bong, Shin, Jai-Kwang, Lee, Jung-Hee
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Etching
Gallium nitride
GaN
Leakage current
Logic gates
MOSFETs
normally off
Surface morphology
tetramethylammonium hydroxide (TMAH)
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Summary:Normally off Al 2 O 3 /GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as a postgate-recess process. The TMAH-treated device with a gate length of 2.5 μm exhibited excellent device performances, such as a threshold voltage of 3.5 V, a maximum drain current of 336 mA/mm, and a breakdown voltage of 725 V, along with extremely small gate leakage current of about 10 -9 A/mm at V gs = 15 V, which is approximately six orders lower in magnitude compared to that of the device without TMAH treatment.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2163293