Effects of TMAH Treatment on Device Performance of Normally Off \hbox\hbox/\hbox MOSFET

Normally off Al 2 O 3 /GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as a postgate-recess process. The TMAH-treated device with a gate length of 2.5 μm exhibited excellent device performances, such as a threshold voltage of 3.5 V, a maximum drain cur...

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Published in:IEEE electron device letters 2011-10, Vol.32 (10), p.1376-1378
Main Authors: Kim, Ki-Won, Jung, Sung-Dal, Kim, Dong-Seok, Kang, Hee-Sung, Im, Ki-Sik, Oh, Jae-Joon, Ha, Jong-Bong, Shin, Jai-Kwang, Lee, Jung-Hee
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Etching
Gallium nitride
GaN
Leakage current
Logic gates
MOSFETs
normally off
Surface morphology
tetramethylammonium hydroxide (TMAH)
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cited_by cdi_FETCH-LOGICAL-c1748-3350cc2c141a1f33a28cacc6928ed699d804e15c46e0c8f23e730e56d5479bf13
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container_issue 10
container_start_page 1376
container_title IEEE electron device letters
container_volume 32
creator Kim, Ki-Won
Jung, Sung-Dal
Kim, Dong-Seok
Kang, Hee-Sung
Im, Ki-Sik
Oh, Jae-Joon
Ha, Jong-Bong
Shin, Jai-Kwang
Lee, Jung-Hee
description Normally off Al 2 O 3 /GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as a postgate-recess process. The TMAH-treated device with a gate length of 2.5 μm exhibited excellent device performances, such as a threshold voltage of 3.5 V, a maximum drain current of 336 mA/mm, and a breakdown voltage of 725 V, along with extremely small gate leakage current of about 10 -9 A/mm at V gs = 15 V, which is approximately six orders lower in magnitude compared to that of the device without TMAH treatment.
doi_str_mv 10.1109/LED.2011.2163293
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source IEEE Electronic Library (IEL) Journals
subjects Aluminum gallium nitride
Etching
Gallium nitride
GaN
Leakage current
Logic gates
MOSFETs
normally off
Surface morphology
tetramethylammonium hydroxide (TMAH)
title Effects of TMAH Treatment on Device Performance of Normally Off \hbox\hbox/\hbox MOSFET
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