Theoretical approach of the photofield emission of a degenerate semiconductor

In a high external electric field, a strong band bending confines the electron to a surface region. In the range of field (1-10 GV/m) most of the electrons close to the surface remain at the ground level E/sub o/. The emitted current is numerically computed. The results show that the current saturat...

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Bibliographic Details
Main Authors: Chbihi, A., Dupont, M., Gardes, J., Jaber, Z., Querrou, M.
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Cathodes
Chemical analysis
Electron emission
Photoconductivity
Poisson equations
Potential energy
Space charge
Temperature
Voltage
Online Access:Request full text
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Summary:In a high external electric field, a strong band bending confines the electron to a surface region. In the range of field (1-10 GV/m) most of the electrons close to the surface remain at the ground level E/sub o/. The emitted current is numerically computed. The results show that the current saturation arises at higher fields. Matrix element that describes the photoexcitation of electrons is presented and photocurrent is calculated.
DOI:10.1109/IVMC.1996.601767