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Studies of RF sputtered CrSiOx and SiC as series resistor films in FED displays

We have studied the physical and electrical properties of Cr-SiOx ("cermet") and SiC films for use as series resistors in field emitter displays (FEDs). The cermet films were RF reactively sputtered from a CrSi/sub 2/ target in an oxygen/argon mixture. For cermet, we find that as-deposited...

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Bibliographic Details
Main Authors: Nowicki, RS, Busta, H.H., Pogemiller, J.E., Forouhi, A.R., Bloomer, I., Clift, W.M., Ja Lee Yio, Felter, T.
Format: Conference Proceeding
Language:English
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Summary:We have studied the physical and electrical properties of Cr-SiOx ("cermet") and SiC films for use as series resistors in field emitter displays (FEDs). The cermet films were RF reactively sputtered from a CrSi/sub 2/ target in an oxygen/argon mixture. For cermet, we find that as-deposited films are amorphous and exhibit high-Mohm-cm resistivity with refractive index values approaching that of silicon nitride, whereas films heat treated at 350/spl deg/C for ca. one hour in air or under vacuum are loosely crystalline and exhibit low-to-mid-10E+4 ohm-cm resistivity and refractive index values approaching that of SiO/sub 2/. The crystallized films exhibit a roughened surface which will generate microdefects in an overlying oxide film. For sputtered SiC, the as-deposited films are amorphous, with resistivity values of high-10E+4 ohm cm. The heat treated SiC films are finely crystalline, with resistivity values of low-to-mid-10E+5 ohm-cm. They also exhibit the desirable near-linear ohmic characteristics.
DOI:10.1109/IVMC.1996.601802