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Uniform field emission from polycrystalline CVD-diamond films
We have systematically investigated the electron emission of various kinds of polycrystalline CVD-diamond films by means of a Field Emission Scanning Microscope with /spl mu/m resolution, which contains an in situ scanning electron microscope. Besides the previously reported enhanced field emission...
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Main Authors: | , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | We have systematically investigated the electron emission of various kinds of polycrystalline CVD-diamond films by means of a Field Emission Scanning Microscope with /spl mu/m resolution, which contains an in situ scanning electron microscope. Besides the previously reported enhanced field emission from particulate contamination and other surface irregularities at electric fields between 2.5 and 150 MV/m, an almost uniform emission over the film surface was detected on all samples at applied electric fields above 220 MV/m. The pure p-doped Si-100-substrate requires, in comparison, much higher fields for electron emission. Field emission at electric fields as low as 70 MV/m was achieved from Si-dots covered with diamond-caps. The comparison of high-resolution line scans with model calculations strongly suggests the observed intrinsic field emission of CVD-diamond combined with geometrical field enhancement as responsible emission mechanism of these structures. |
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DOI: | 10.1109/IVMC.1996.601820 |