W -Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170-200-GHz Doublers in 45-nm CMOS

This paper presents low-noise -band amplifiers and milliwatt-level 170-200-GHz output doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology. The transistors are modeled using R/C extraction and full electromagnetic modeling. The measured of a 30 1- transistor is 200-210 GHz at a bias cu...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2012-03, Vol.60 (3), p.692-701
Main Authors: Cetinoneri, B., Atesal, Y. A., Fung, A., Rebeiz, G. M.
Format: Article
Language:English
Subjects:
Amplifiers
CMOS
CMOS integrated circuits
Conversion
Current measurement
frequency doubler
G -band
low-noise amplifiers
Metals
Microwaves
millimeter-wave integrated circuits
Noise
Noise levels
Noise measurement
Power generation
Semiconductor devices
Transistors
Transmission line measurements
W -band
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Summary:This paper presents low-noise -band amplifiers and milliwatt-level 170-200-GHz output doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology. The transistors are modeled using R/C extraction and full electromagnetic modeling. The measured of a 30 1- transistor is 200-210 GHz at a bias current of 0.3-0.5 . A three-stage -band amplifier shows a record noise figure of 6.0 dB and a saturated output power of 7.5-8.0 dBm with a power-added efficiency of 9%, all at 95 GHz. The -band balanced doubler results in an output power of 1 mW at 180 GHz. A -band amplifier/ -band doubler chip is also demonstrated, with a peak output power of 0.5-1 mW at 170-195 GHz and a conversion gain from to . This paper shows that 45-nm SOI CMOS, built for digital and mixed-signal applications, results in state-of-the-art performance at - and -band.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2011.2165964