An ultra low-voltage, ultra low-power CMOS mixer using the body effect

A fully differential ultra low-voltage, ultra low-power down-conversion mixer is presented in this paper. The mixer is designed using four-terminal MOS transistors. The radio-frequency (RF) and local-oscillator signals are applied to the gate and bulk of the devices, respectively. The proposed circu...

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Bibliographic Details
Main Authors: Zoka, Negar, Kargaran, Ehsan, Nabovati, Ghazal, Nabovati, Hooman
Format: Conference Proceeding
Language:English
Subjects:
Mixers
Radio frequency
Topology
Online Access:Request full text
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Summary:A fully differential ultra low-voltage, ultra low-power down-conversion mixer is presented in this paper. The mixer is designed using four-terminal MOS transistors. The radio-frequency (RF) and local-oscillator signals are applied to the gate and bulk of the devices, respectively. The proposed circuit is designed and simulated in the TSMC 0.18_μm CMOS process, with a 1.9GHz RF signal; the simulation results show that the proposed mixer has a conversion gain of 8dB, IIP3 of -10.6dBm and SSB noise figure of 12.7dB. The total power consumption in the 0.5 V supply voltage is 1.32mW.
ISSN:1548-3746
1558-3899
DOI:10.1109/MWSCAS.2011.6026543