1/f noise modeling of InP HBT-based Schottky diodes for monolithic monolithic millimeter-wave mixers

We present a procedure for modeling the low-frequency 1/f noise properties of millimeter-wave InP HBT-based Schottky diodes. These noise properties, coupled with the device's small and large-signal characteristics, enable the generation of a comprehensive diode model. The model is particularly...

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Bibliographic Details
Main Authors: Chung, Y.H., Sato, K.F., Chan, C.W., Lin, E.W., Grossman, P.C., Tran, L.T., Cowles, J., Wang, H., Oki, A.K., Najita, K., DeLisio, M.P.
Format: Conference Proceeding
Language:English
Subjects:
Circuit noise
Current measurement
Heterojunction bipolar transistors
Indium phosphide
Low-frequency noise
Millimeter wave measurements
Millimeter wave technology
MMICs
Noise measurement
Schottky diodes
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Summary:We present a procedure for modeling the low-frequency 1/f noise properties of millimeter-wave InP HBT-based Schottky diodes. These noise properties, coupled with the device's small and large-signal characteristics, enable the generation of a comprehensive diode model. The model is particularly useful for analyzing mixer and detector MMIC's. Simulations using this model compare well with W-band mixer measurements.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1997.602928