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Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET

In this paper, we present the investigation of narrow-width effects (NWEs) on partially depleted (PD) silicon-on-insulator (SOI) with different gate shape topologies. Based on dc/ac measurements and TCAD simulations, it shows detailed clarifications of body-tied-induced NWEs. The overall study demon...

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Published in:	IEEE transactions on electron devices 2011-11, Vol.58 (11), p.3793-3800
Main Authors:	Valentin, R., Bertrand, G., Puget, S., Scheer, P., Juge, A., Jaouen, H., Raynaud, C.
Format:	Article
Language:	English
Subjects:	65 nm Applied sciences Body contact body tied Contact Contacts Depletion Electronics Exact sciences and technology Gates Logic gates Mathematical analysis MOSFET MOSFET circuits MOSFETs narrow-width effects (NWEs) partially depleted (PD) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shape Silicon on insulator technology silicon-on-insulator (SOI) Topology Transistors
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container_issue	11
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creator	Valentin, R. Bertrand, G. Puget, S. Scheer, P. Juge, A. Jaouen, H. Raynaud, C.
description	In this paper, we present the investigation of narrow-width effects (NWEs) on partially depleted (PD) silicon-on-insulator (SOI) with different gate shape topologies. Based on dc/ac measurements and TCAD simulations, it shows detailed clarifications of body-tied-induced NWEs. The overall study demonstrates relationship between gate shape topologies, body-tied shape, and electrical width of the transistor. Provided physical-based analytical models are able to capture peak GM and C GG as function of gate length, transistor width, physical gate-overlap width, and number of body tied. This results in improving the overall model accuracy of body contact and floating-body PD SOI MOSFETs.
doi_str_mv	10.1109/TED.2011.2165283
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subjects	65 nm Applied sciences Body contact body tied Contact Contacts Depletion Electronics Exact sciences and technology Gates Logic gates Mathematical analysis MOSFET MOSFET circuits MOSFETs narrow-width effects (NWEs) partially depleted (PD) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shape Silicon on insulator technology silicon-on-insulator (SOI) Topology Transistors
title	Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET
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