Effects of atomic disorder on carrier transport in Si nanowire transistors

Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect-transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function metho...

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Bibliographic Details
Main Authors: Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., Mori, N.
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
Charge carrier density
Crystals
FETs
Logic gates
Silicon
Strain
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Summary:Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect-transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function methods. Simulation results show that the injection velocity in n-type Si NW FETs is less affected by the disorder compared to p-type devices, which can be attributed to differences in the in-plane carrier profile.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2011.6035041