Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

We present density functional theory based calculations of band structure and density of states curves for bulk silicon carbide (SiC) and possible silicon carbide-silicon dioxide (SiC-SiO 2 ) interfaces. We then show carrier transport calculations in these structures using Monte Carlo techniques. Th...

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Bibliographic Details
Main Authors: Akturk, A., Salemi, S., Goldsman, N., Potbhare, S., Lelis, A.
Format: Conference Proceeding
Language:English
Subjects:
Carbon
density of states
Discrete Fourier transforms
Monte Carlo methods
Monte Carlo transport
Photonic band gap
Scattering
Silicon
Silicon carbide
silicon carbide interface traps
silicon carbide-silicon dioxide interface
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Summary:We present density functional theory based calculations of band structure and density of states curves for bulk silicon carbide (SiC) and possible silicon carbide-silicon dioxide (SiC-SiO 2 ) interfaces. We then show carrier transport calculations in these structures using Monte Carlo techniques. This is for understanding the origins of the bandgap traps arising from the SiC-SiO 2 interface, which are of relatively high concentration in SiC MOSFETs compared to those in Si MOSFETs. It is also for investigating the effects of different atomic configurations on channel mobility, on-resistance, and thus losses in SiC power MOSFETs that are used as low-loss switching devices in high power high temperature applications.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2011.6035064