Suspended single-electron transistor as a detector of its nanomechanical motion

We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. I...

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Bibliographic Details
Main Authors: Pashkin, Y., Tiefu Li, Pekola, J., Astafiev, O., Knyazev, D., Hoehne, F., Hyunsik Im, Nakamura, Y., Jaw-Shen Tsai
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
doubly clamped beam
Frequency measurement
Frequency modulation
Logic gates
nanomechanical resonator
Radio frequency
Resonant frequency
single-electron transistor
transducer
Voltage measurement
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Summary:We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. In addition to the regular side gate, a bottom gate with a large capacitance, is placed beneath the SET island for increasing the SET coupling to the mechanical motion. The observed response is reproduced in our simulations, which are based on the orthodox model that considers the fundamental flexural mode of the resonating SET island.
ISSN:2150-3591
2150-3605
DOI:10.1109/ICONN.2010.6045266