A D-LDD (double lightly-doped drain) structure H-MESFET for MMIC applications

This paper proposes a new D-LDD (Double Lightly-Doped Drain) structure for InGaP-InGaAs H-MESFETs (Heterostructure-MESFET). A D-LDD H-MESFET has three kinds of low resistant layers in the drain region, while a conventional H-MESFET has two layers. This structure improves MAG accompanied by Rd reduct...

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Bibliographic Details
Main Authors: Yamane, Y., Onodera, K., Nittono, T., Nishimura, K., Yamasaki, K., Kanda, A.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Degradation
Fabrication
FETs
Implants
Indium gallium arsenide
Laboratories
MESFETs
MMICs
Voltage
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Summary:This paper proposes a new D-LDD (Double Lightly-Doped Drain) structure for InGaP-InGaAs H-MESFETs (Heterostructure-MESFET). A D-LDD H-MESFET has three kinds of low resistant layers in the drain region, while a conventional H-MESFET has two layers. This structure improves MAG accompanied by Rd reduction with minimized gate-breakdown-voltage degradation and Cgd increase. These trade-offs between Rd and breakdown voltage are discussed in detail. Consequently, a typical MAG at 50 GHz exhibits 8.9 dB S21 in a MESFET and 7.7 dB S21 in a 1-stage amplifier. The high-frequency circuit operation proves that this technology is one of the most promising for MMIC applications.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1997.604567