Investigation into factors, affecting the control of microstrip transfer line characteristics on a semicondactor substrate

The results from numerical simulation of the frequency characteristics of the controlled microstrip line on the semiconductor substrate (MLSS) over the 5 to 7 GHz frequency range are presented. This line contains the gallium arsenide or a silicon active layer which changes the electrophysical parame...

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Bibliographic Details
Main Authors: Kopylov, A. F., Kopylova, N. A.
Format: Conference Proceeding
Language:English
Subjects:
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Gallium arsenide
Microstrip
Numerical simulation
Oscillators
Substrates
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Summary:The results from numerical simulation of the frequency characteristics of the controlled microstrip line on the semiconductor substrate (MLSS) over the 5 to 7 GHz frequency range are presented. This line contains the gallium arsenide or a silicon active layer which changes the electrophysical parameters are reason of control power transmission coefficient through section of MLSS. In this communication the comparison results of numerical simulations of phase-frequency and amplitude-frequency response curves for the power transmission coefficient through the section of MLSS with frequency responses curves of complex constant propagation are presented. We note the disparity between the frequency of phase-frequency and transmission coefficient trends.