Test board for power FET's nonliner model extraction

The simple correction method is presented for the non-linear models of power FET's to be adjusted by means of measurements of transistors in a test board. The technique is based on measurement of the same transistor in 50 Ohm line and then in matching networks with known impedance realizing max...

Full description

Saved in:
Bibliographic Details
Main Authors: Kapralova, A. A., Korchagin, I. P., Manchenko, L. V., Pashkovskii, A. B., Pchelin, V. A., Tregubov, V. B.
Format: Conference Proceeding
Language:English
Subjects:
Electronic mail
HEMTs
Impedance
MESFETs
Power generation
Power measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The simple correction method is presented for the non-linear models of power FET's to be adjusted by means of measurements of transistors in a test board. The technique is based on measurement of the same transistor in 50 Ohm line and then in matching networks with known impedance realizing maximum gain factor at the operating point, and in a test circuitry adjusted for the maximum of output capacity.