Formation of nanoclusters in the process of nanostructured films formation

The influence of gas flow speed, hydrides concentration in the reaction zone and the temperature of substrate on the process of formation of germanium nanoclusters and the solid silicon-germanium (Si-Ge) solution is estimated.

Saved in:
Bibliographic Details
Main Authors: Kovalevsky, A. A., Strogova, A. S., Borisevich, V. M., Strogova, N. S.
Format: Conference Proceeding
Language:English
Subjects:
Electronic mail
Fluid flow
Germanium
Inductors
Solids
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of gas flow speed, hydrides concentration in the reaction zone and the temperature of substrate on the process of formation of germanium nanoclusters and the solid silicon-germanium (Si-Ge) solution is estimated.