Impact ionization effective threshold energy estimation in MOSFET with 50-nm channel length

In the frame of Keldysh model the impact ionization effective threshold energy has been calculated for deep submicron silicon MOSFET by means of Monte-Carlo electron transport simulation. The possibility of the impact ionization rate description by one-parameter Keldysh model is shown.

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Bibliographic Details
Main Authors: Speranskiy, D. S., Borzdov, A. V., Borzdov, V. M.
Format: Conference Proceeding
Language:English
Subjects:
Estimation
Impact ionization
MOSFET circuits
Scattering
Semiconductor process modeling
Silicon
Transistors
Online Access:Request full text
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Description
Summary:In the frame of Keldysh model the impact ionization effective threshold energy has been calculated for deep submicron silicon MOSFET by means of Monte-Carlo electron transport simulation. The possibility of the impact ionization rate description by one-parameter Keldysh model is shown.