A new technique for characterizing very low frequency noise of bipolar junction transistors

Using time sampled DC measurements from standard bench-top semiconductor parameter analyzers, it proves possible to characterize low frequency noise of BJT's down to sub-mHz frequencies. The new technique is exemplified using SiGeC HBT's. Base current random telegraph noise with time const...

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Bibliographic Details
Main Authors: Tuinhout, H., Zegers-van Duijnhoven, A., Mertens, H., Heringa, A.
Format: Conference Proceeding
Language:English
Subjects:
1/f noise
Current measurement
device physics
Frequency measurement
Low-frequency noise
measurement method
Noise measurement
Semiconductor device measurement
Silicon bipolar/BiCMOS process technology
Time measurement
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Description
Summary:Using time sampled DC measurements from standard bench-top semiconductor parameter analyzers, it proves possible to characterize low frequency noise of BJT's down to sub-mHz frequencies. The new technique is exemplified using SiGeC HBT's. Base current random telegraph noise with time constants of as long as tens of seconds is demonstrated.
ISSN:1088-9299
2378-590X
DOI:10.1109/BCTM.2011.6082774