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A new technique for characterizing very low frequency noise of bipolar junction transistors
Using time sampled DC measurements from standard bench-top semiconductor parameter analyzers, it proves possible to characterize low frequency noise of BJT's down to sub-mHz frequencies. The new technique is exemplified using SiGeC HBT's. Base current random telegraph noise with time const...
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creator | Tuinhout, H. Zegers-van Duijnhoven, A. Mertens, H. Heringa, A. |
description | Using time sampled DC measurements from standard bench-top semiconductor parameter analyzers, it proves possible to characterize low frequency noise of BJT's down to sub-mHz frequencies. The new technique is exemplified using SiGeC HBT's. Base current random telegraph noise with time constants of as long as tens of seconds is demonstrated. |
doi_str_mv | 10.1109/BCTM.2011.6082774 |
format | conference_proceeding |
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ispartof | 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.170-173 |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | 1/f noise Current measurement device physics Frequency measurement Low-frequency noise measurement method Noise measurement Semiconductor device measurement Silicon bipolar/BiCMOS process technology Time measurement |
title | A new technique for characterizing very low frequency noise of bipolar junction transistors |
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