Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique

In this work, we present an extended version of a dc method to experimentally evaluate the base resistance R B of bipolar transistors as a function of the biasing conditions. In particular, the approach allows accurately monitoring the R B increase with collector voltage beyond the open-base breakdo...

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Bibliographic Details
Main Authors: Costagliola, M., d'Alessandro, V., Celi, D., Chantre, A., Chevalier, P., Meister, T., Aufinger, K., Rinaldi, N.
Format: Conference Proceeding
Language:English
Subjects:
Base resistance
bipolar transistor
Bipolar transistors
Current measurement
dc measurements
Immune system
Integrated circuits
parameter extraction
pinch-in
Resistance
Transistors
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Summary:In this work, we present an extended version of a dc method to experimentally evaluate the base resistance R B of bipolar transistors as a function of the biasing conditions. In particular, the approach allows accurately monitoring the R B increase with collector voltage beyond the open-base breakdown voltage BV CEO up to the pinch-in occurrence. The method is successfully applied to state-of-the-art HF SiGe:C heterojunction bipolar transistors (HBTs).
ISSN:1088-9299
2378-590X
DOI:10.1109/BCTM.2011.6082778