50-Gb/s Silicon Optical Modulator

Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the pr...

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Bibliographic Details
Published in:IEEE photonics technology letters 2012-02, Vol.24 (4), p.234-236
Main Authors: Thomson, D. J., Gardes, F. Y., Fedeli, J-M, Zlatanovic, S., Youfang Hu, Kuo, B. P. P., Myslivets, E., Alic, N., Radic, S., Mashanovich, G. Z., Reed, G. T.
Format: Article
Language:English
Subjects:
Extinction ratio
High speed
High speed optical techniques
Mach-Zehnder interferometer (MZI)
Optical device fabrication
Optical modulation
optical modulator
Optical waveguides
Silicon
silicon photonics
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Summary:Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the present been demonstrated at data rates up to 40 Gb/s; however, here we present for the first time optical modulation at 50 Gb/s with a 3.1-dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer. A corresponding optical insertion loss of approximately 7.4 dB is measured.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2177081