Reverse leakage current mechanisms in quantum dot laser structures

Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the reverse le...

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Bibliographic Details
Main Authors: Hasbullah, N. F., David, J. P. R.
Format: Conference Proceeding
Language:English
Subjects:
Dark current
Electric fields
Gallium arsenide
Quantum dot lasers
Temperature
Temperature dependence
Temperature measurement
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Summary:Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the reverse leakage is due to generation-recombination via mid-band traps assisted by Frenkel-Poole emission of carriers from these traps. Since the dark current is a relatively parameter to determine in a device, optimising this is a quicker means of optimising the growth parameters than undertaking full laser testing.
DOI:10.1109/RSM.2011.6088285