V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing

A novel impurity-free interdiffusion (IFID) technique, namely, pulsed anodization and subsequent rapid thermal annealing, is applied to study GaAs/AlGaAs multiple quantum wires grown by metalorganic chemical vapour deposition on V-grooved GaAs substrates. Photoluminescence (PL) and cathodoluminescen...

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Bibliographic Details
Main Authors: Kim, Y., Yuan, S., Leon, R., Clark, A., Jagadish, C., Johnston, M.B., Burke, P., Gal, M., Zou, J., Cockayne, D., Phillips, M.R., Kalceff, M.A.
Format: Conference Proceeding
Language:English
Subjects:
Character generation
Epitaxial layers
Gallium arsenide
Pulse generation
Radiative recombination
Rapid thermal annealing
Signal generators
Substrates
Temperature
Wires
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Summary:A novel impurity-free interdiffusion (IFID) technique, namely, pulsed anodization and subsequent rapid thermal annealing, is applied to study GaAs/AlGaAs multiple quantum wires grown by metalorganic chemical vapour deposition on V-grooved GaAs substrates. Photoluminescence (PL) and cathodoluminescence (CL) emissions are observed from GaAs quantum wires. IFID increases both carrier confinement in quantum wires and the efficiency of excess carrier transfer from sidewall quantum wells to quantum wires, where the excess carriers are generated either by optical pumping (PL) or electron pumping (CL).
DOI:10.1109/COMMAD.1996.610106