Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

In electronic systems, the ever-increasing level of integration is paced by component scaling. Consequently, system-level protection improvements in electrostatic discharge (ESD) reliability during a device's lifetime are mandatory. To this end, we have investigated bidirectional system-level E...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-01, Vol.59 (1), p.108-113
Main Authors: Diatta, M., Tremouilles, D., Bouyssou, E., Perdreau, R., Anceau, C., Bafleur, M.
Format: Article
Language:English
Subjects:
Applied sciences
Degradation
Diodes
Electronics
Electrostatic discharge (ESD)
Electrostatic discharges
Engineering Sciences
Exact sciences and technology
Failure analysis
failure mechanisms
Junctions
Leakage current
Micro and nanotechnologies
Microelectronics
protection diode
Robustness
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
system level
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Summary:In electronic systems, the ever-increasing level of integration is paced by component scaling. Consequently, system-level protection improvements in electrostatic discharge (ESD) reliability during a device's lifetime are mandatory. To this end, we have investigated bidirectional system-level ESD protection diodes that have been subjected to repetitive human metal model stresses. Our goal was to develop robust ESD components by understanding the physical and electrical behaviors of components after multiple ESD surges. In this paper, three ESD-induced failure modes of protection devices are demonstrated and analyzed in terms of severity, i.e., charge trapping in the silicon-oxide interface, metallic diffusion toward the contacts, and melted filaments in the silicon bulk at the junction periphery.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2173576