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Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment
We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surfac...
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creator | Unami, N. Noma, H. Sakuma, K. Shigetou, A. Shoji, S. Mizuno, J. |
description | We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O 3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O 3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O 3 and/or formic acid treatment is about twice that of a bump with no treatment. |
doi_str_mv | 10.1109/ISAPM.2011.6105704 |
format | conference_proceeding |
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Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O 3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O 3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O 3 and/or formic acid treatment is about twice that of a bump with no treatment.</description><identifier>ISSN: 1550-5723</identifier><identifier>ISBN: 9781467301480</identifier><identifier>ISBN: 1467301485</identifier><identifier>EISBN: 9781467301497</identifier><identifier>EISBN: 1467301493</identifier><identifier>DOI: 10.1109/ISAPM.2011.6105704</identifier><language>eng ; jpn</language><publisher>IEEE</publisher><subject>Bonding ; Flip chip ; Silicon ; Surface contamination ; Surface treatment ; Three dimensional displays ; Tin</subject><ispartof>2011 International Symposium on Advanced Packaging Materials (APM), 2011, p.220-225</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6105704$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54530,54895,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6105704$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Unami, N.</creatorcontrib><creatorcontrib>Noma, H.</creatorcontrib><creatorcontrib>Sakuma, K.</creatorcontrib><creatorcontrib>Shigetou, A.</creatorcontrib><creatorcontrib>Shoji, S.</creatorcontrib><creatorcontrib>Mizuno, J.</creatorcontrib><title>Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment</title><title>2011 International Symposium on Advanced Packaging Materials (APM)</title><addtitle>ISAPM</addtitle><description>We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O 3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O 3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O 3 and/or formic acid treatment is about twice that of a bump with no treatment.</description><subject>Bonding</subject><subject>Flip chip</subject><subject>Silicon</subject><subject>Surface contamination</subject><subject>Surface treatment</subject><subject>Three dimensional displays</subject><subject>Tin</subject><issn>1550-5723</issn><isbn>9781467301480</isbn><isbn>1467301485</isbn><isbn>9781467301497</isbn><isbn>1467301493</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpVUMtKAzEUjahgqf0B3eQHpt5MXpNlKT4KFQV1Xe7MJDUyL5JM0b93it14F-cBhwPnEnLDYMkYmLvN2-r1eZkDY0vFQGoQZ2RhdMGE0hyYMPr8ny_ggsyYlJBJnfMrsojxC6ZTuZ5CM9JuuoONye8x-b6LtHfUNeN3Y2OchB-y6tMPtOy72nd7OsYjHrAax5aOTQp48H1jE8Wupq4Pra8oVr6eIkMfaByDw8rSFCym1nbpmlw6bKJdnHhOPh7u39dP2fblcbNebTPPpEqZLHIrhS2ULhlKgQyPQ4RynKla8kph7Uoj0SiAoixQgAADeY2a81xow-fk9q_XW2t3Q_Athp_d6WH8F-L7Xcc</recordid><startdate>201110</startdate><enddate>201110</enddate><creator>Unami, N.</creator><creator>Noma, H.</creator><creator>Sakuma, K.</creator><creator>Shigetou, A.</creator><creator>Shoji, S.</creator><creator>Mizuno, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201110</creationdate><title>Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment</title><author>Unami, N. ; Noma, H. ; Sakuma, K. ; Shigetou, A. ; Shoji, S. ; Mizuno, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i156t-582e54e867b1a54a1a148046f316d53c6adfb95a96008b8a4040902da73324793</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; jpn</language><creationdate>2011</creationdate><topic>Bonding</topic><topic>Flip chip</topic><topic>Silicon</topic><topic>Surface contamination</topic><topic>Surface treatment</topic><topic>Three dimensional displays</topic><topic>Tin</topic><toplevel>online_resources</toplevel><creatorcontrib>Unami, N.</creatorcontrib><creatorcontrib>Noma, H.</creatorcontrib><creatorcontrib>Sakuma, K.</creatorcontrib><creatorcontrib>Shigetou, A.</creatorcontrib><creatorcontrib>Shoji, S.</creatorcontrib><creatorcontrib>Mizuno, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Unami, N.</au><au>Noma, H.</au><au>Sakuma, K.</au><au>Shigetou, A.</au><au>Shoji, S.</au><au>Mizuno, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment</atitle><btitle>2011 International Symposium on Advanced Packaging Materials (APM)</btitle><stitle>ISAPM</stitle><date>2011-10</date><risdate>2011</risdate><spage>220</spage><epage>225</epage><pages>220-225</pages><issn>1550-5723</issn><isbn>9781467301480</isbn><isbn>1467301485</isbn><eisbn>9781467301497</eisbn><eisbn>1467301493</eisbn><abstract>We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O 3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O 3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O 3 and/or formic acid treatment is about twice that of a bump with no treatment.</abstract><pub>IEEE</pub><doi>10.1109/ISAPM.2011.6105704</doi><tpages>6</tpages></addata></record> |
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ispartof | 2011 International Symposium on Advanced Packaging Materials (APM), 2011, p.220-225 |
issn | 1550-5723 |
language | eng ; jpn |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Bonding Flip chip Silicon Surface contamination Surface treatment Three dimensional displays Tin |
title | Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment |
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