Thin AlAsSb avalanche regions with sub-mV/K temperature coefficients of breakdown voltage and very low excess noise factors

AlAsSb avalanche regions of less than 100nm thick exhibit temperature coefficients of breakdown voltage of 0.95 mV/K and excess noise corresponding to effective ionization coefficient ratio of k eff ~0.1 to 0.15.

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Bibliographic Details
Main Authors: Chee Hing Tan, Shiyu Xie, Jingjing Xie
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Current measurement
Indium gallium arsenide
Indium phosphide
Noise
Temperature measurement
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Description
Summary:AlAsSb avalanche regions of less than 100nm thick exhibit temperature coefficients of breakdown voltage of 0.95 mV/K and excess noise corresponding to effective ionization coefficient ratio of k eff ~0.1 to 0.15.
ISSN:1092-8081
2766-1733
DOI:10.1109/PHO.2011.6110534