Compact DSM MOSFET model and its parameters extraction

New contribution to the methodology for simulation of Deep SubMicron (DSM), nanometer-scale Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) features is proposed. The discussed approach is based on the use of traditional "compact" submicron device model. Parameters of these model...

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Bibliographic Details
Main Authors: Belous, A., Nelayev, V., Shvedov, S., Stempitsky, V., Tran Tuan Trung, Turtsevich, A.
Format: Conference Proceeding
Language:English
Subjects:
Computational modeling
Integrated circuit modeling
Mathematical model
MOSFET circuits
MOSFETs
Parameter extraction
Simulation
Online Access:Request full text
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Summary:New contribution to the methodology for simulation of Deep SubMicron (DSM), nanometer-scale Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) features is proposed. The discussed approach is based on the use of traditional "compact" submicron device model. Parameters of these models are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge carriers transfer in DSM MOSFET.
DOI:10.1109/EWDTS.2011.6116414