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An ultra-low-cost Bluetooth SOC in 0.11-μm CMOS
A highly-integrated, ultra-low-cost Bluetooth SOC implemented in 0.11μm digital CMOS technology is disclosed. To reduce BOM count and cost, an integrated balun is designed for the transceiver front-end. A 4xLO based VCO is implemented to reduce LO pulling, and minimize TX out-of-band spurious in the...
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Main Authors: | , , , , , , , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | A highly-integrated, ultra-low-cost Bluetooth SOC implemented in 0.11μm digital CMOS technology is disclosed. To reduce BOM count and cost, an integrated balun is designed for the transceiver front-end. A 4xLO based VCO is implemented to reduce LO pulling, and minimize TX out-of-band spurious in the direct-conversion transmitter. The transmitter provides high output power at +10dBm and +7dBm in BDR and EDR3 modes respectively, with 1.5-kHz frequency stability and |
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DOI: | 10.1109/ASSCC.2011.6123591 |