InP based HFET structure grown and processed at very low temperatures below 300/spl deg/C

We present a new method which allows overgrowth of a fully processed InP optoelectronic component at an extremely low temperature of less than 300/spl deg/C. This includes all processing steps needed for FET fabrication. InP grown at low temperature forms a P/sub In/ anti-site defect, with the first...

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Bibliographic Details
Main Authors: Henle, B., Kohn, E.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Conducting materials
Current density
Electric breakdown
FETs
HEMTs
Indium phosphide
MODFETs
Sheet materials
Temperature
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Summary:We present a new method which allows overgrowth of a fully processed InP optoelectronic component at an extremely low temperature of less than 300/spl deg/C. This includes all processing steps needed for FET fabrication. InP grown at low temperature forms a P/sub In/ anti-site defect, with the first excited state located 120 meV above the conduction band edge. This material is automatically n-type and auto-doped and is therefore a candidate for a active layers such as the FET channel material. The concentration of this P/sub In/ anti-site defects is connected with the growth temperature and V/III flux ratio. Therefore a strong influence of growth temperature on sheet carrier concentration and saturation current is found.
DOI:10.1109/DRC.1997.612480