High gain 4H-SiC static induction transistors using novel sub-micron airbridging

For the first time, high gain 4H-SiC static induction transistors (SITs) have been fabricated using a sub-micron source airbridging technique. These devices exhibit record 15 dB small signal gain at 3 GHz. This represents the highest gain yet reported for a SIT structure in any semiconductor.

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Bibliographic Details
Main Authors: Siergiej, R.R., Morse, A.W., Esker, P.M., Smith, T.J., Bojko, R.J., Rowland, L.B., Clarke, R.C.
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Dielectric measurements
Gain measurement
Packaging
Parasitic capacitance
Performance gain
Silicon carbide
Temperature
Thermal conductivity
Voltage
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Description
Summary:For the first time, high gain 4H-SiC static induction transistors (SITs) have been fabricated using a sub-micron source airbridging technique. These devices exhibit record 15 dB small signal gain at 3 GHz. This represents the highest gain yet reported for a SIT structure in any semiconductor.
DOI:10.1109/DRC.1997.612502