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Streak-mode optical sensor in standard BiCMOS technology

A streak-mode optical sensor suitable for the accurate observation of nanosecond luminous phenomena is presented. The imager is fabricated in a standard 0.35 μm SiGe BiCMOS technology. It reaches a total acquisition rate of 512 GS/s and a temporal resolution of 490 ps at λ = 400 nm. The sensor has b...

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Bibliographic Details
Main Authors: Zlatanski, M., Uhring, W.
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Request full text
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Summary:A streak-mode optical sensor suitable for the accurate observation of nanosecond luminous phenomena is presented. The imager is fabricated in a standard 0.35 μm SiGe BiCMOS technology. It reaches a total acquisition rate of 512 GS/s and a temporal resolution of 490 ps at λ = 400 nm. The sensor has been successfully employed to acquire the fluorescence profile of a stilbene sample, demonstrating its capability to record nanosecond-order transients with high temporal resolution.
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2011.6127362