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Streak-mode optical sensor in standard BiCMOS technology
A streak-mode optical sensor suitable for the accurate observation of nanosecond luminous phenomena is presented. The imager is fabricated in a standard 0.35 μm SiGe BiCMOS technology. It reaches a total acquisition rate of 512 GS/s and a temporal resolution of 490 ps at λ = 400 nm. The sensor has b...
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Main Authors: | , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | A streak-mode optical sensor suitable for the accurate observation of nanosecond luminous phenomena is presented. The imager is fabricated in a standard 0.35 μm SiGe BiCMOS technology. It reaches a total acquisition rate of 512 GS/s and a temporal resolution of 490 ps at λ = 400 nm. The sensor has been successfully employed to acquire the fluorescence profile of a stilbene sample, demonstrating its capability to record nanosecond-order transients with high temporal resolution. |
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ISSN: | 1930-0395 2168-9229 |
DOI: | 10.1109/ICSENS.2011.6127362 |