Frequency Tuning in Integrated InGaAsP/InP Ring Mode-Locked Lasers

We demonstrate for the first time, continuous frequency tuning >;40 MHz using symmetric phase tuning regions in an InGaAsP/InP 18 GHz passively mode-locked ring laser. Frequency tuning is achieved through current injection into passive waveguides, via the free-carrier plasma effect, which is enha...

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Bibliographic Details
Published in:Journal of lightwave technology 2012-05, Vol.30 (9), p.1278-1283
Main Authors: Parker, J. S., Binetti, P. R. A., Yung-Jr Hung, Coldren, L. A.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Directional couplers
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Integrated optics. Optical fibers and wave guides
Laser mode locking
Lasers
Mode-locked laser
Optical and optoelectronic circuits
Optical variables measurement
Optical waveguides
Optics
Physics
pulsed lasers
quantum well laser
Radio frequency
ring laser
Ring lasers
semiconductor laser
Semiconductor lasers
laser diodes
Tuning
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Summary:We demonstrate for the first time, continuous frequency tuning >;40 MHz using symmetric phase tuning regions in an InGaAsP/InP 18 GHz passively mode-locked ring laser. Frequency tuning is achieved through current injection into passive waveguides, via the free-carrier plasma effect, which is enhanced by the concurrent increase in cavity losses from free-carrier absorption. Stable mode-locking with ~1 ps pulse-width is realized from -2.5 to -7.5 V bias on the saturable absorber and 170 to 290 mA drive current. The average RF power is 50 dB above the noise level over this regime.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2012.2184264