A single-event-hardened CMOS operational amplifier design

Novel RHBD techniques are described that utilize charge sharing to mitigate voltage transients due to single event strikes in a folded cascode operational amplifier. These techniques are verified using simulations in a 180-nm CMOS process.

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Bibliographic Details
Main Authors: Blaine, Raymond W., Atkinson, Nicholas M., Kauppila, Jeffrey S., Armstrong, Sarah E., Holman, W. Timothy, Massengill, Lloyd W.
Format: Conference Proceeding
Language:English
Subjects:
charge sharing
CMOS integrated circuits
Integrated circuit modeling
Layout
Operational amplifier
Operational amplifiers
Semiconductor device modeling
sensitive node active charge cancellation (SNACC)
Simulation
single-event effects
Transient analysis
Online Access:Request full text
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Description
Summary:Novel RHBD techniques are described that utilize charge sharing to mitigate voltage transients due to single event strikes in a folded cascode operational amplifier. These techniques are verified using simulations in a 180-nm CMOS process.
ISSN:0379-6566
DOI:10.1109/RADECS.2011.6131296