Influence of displacement damage dose on dark current distributions of irradiated CMOS image sensors

Dark current increase distributions due to displacement damages are modeled using displacement damage dose concept. Several CMOS image sensors have been exposed to neutrons or protons and we have characterized their degradation in terms of dark current increase. We have been able to extract a set of...

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Bibliographic Details
Main Authors: Virmontois, C., Goiffon, V., Magnan, P., Girard, S., Saint-Pe, O., Petit, S., Rolland, G., Bardoux, A.
Format: Conference Proceeding
Language:English
Subjects:
Active Pixel Sensor (APS)
CMOS Image Sensor (CIS)
Dark current
Dark Current Distribution Model
Displacement Damage Dose (DDD)
Exponential distribution
Integrated circuits
Monolithic Active Pixel Sensor (MAPS)
Neutrons
Photodiodes
Protons
Radiation effects
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Summary:Dark current increase distributions due to displacement damages are modeled using displacement damage dose concept. Several CMOS image sensors have been exposed to neutrons or protons and we have characterized their degradation in terms of dark current increase. We have been able to extract a set of two factors from the experimental dark current increase distributions. These factors are used to predict and build dark current increase distribution and leads to a better understanding of displacement damage effects on CMOS image sensors.
ISSN:0379-6566
DOI:10.1109/RADECS.2011.6131312