Combined use of heavy ion and proton test data in the determination of a GaAs Power MESFET critical charge and sensitive depth

A method is proposed that uses the fundamental physical differences between direct and indirect energy deposition processes to obtain accurate values of the sensitive volume (SV) thickness and critical charge of electronic devices. The intention is to calibrate a unified model capable of describing...

Full description

Saved in:
Bibliographic Details
Main Authors: Garcia, R., Daly, E. J., Evans, H. D. R., Nieminen, P., Santin, G., Sierawski, B. D., Mendenhall, M. H.
Format: Conference Proceeding
Language:English
Subjects:
critical charge
Data models
direct ionization
Gallium arsenide
indirect ionization
Ionization
LET threshold
MESFETs
Monte Carlo simulation
Particle beams
Performance evaluation
Protons
Single event effect (SEE)
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A method is proposed that uses the fundamental physical differences between direct and indirect energy deposition processes to obtain accurate values of the sensitive volume (SV) thickness and critical charge of electronic devices. The intention is to calibrate a unified model capable of describing both heavy ion and proton test data through Monte Carlo (MC) simulations and therefore also suitable for performing on-board predictions. The method was applied toavailable test data from a Gallium Arsenide (GaAs) power MESFET currently on board the MetOp-A Earth-observation mission, and results were contrasted with the measured on-board time to failure period.
ISSN:0379-6566
DOI:10.1109/RADECS.2011.6131402