Analysis of SOI CMOS microprocessor's SEE sensitivity: Correlation of the results obtained by different test methods

The results on SEE sensitivity of 0.5 μm SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and 252 Cf fission source) is provided for the cache. The possible sources of discrepancies between test r...

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Bibliographic Details
Main Authors: Gorbunov, M. S., Vasilegin, B. V., Antonov, A. A., Osipenko, P. N., Zebrev, G. I., Anashin, V. S., Emeliyanov, V. V., Ozerov, A. I., Useinov, R. G., Chumakov, A. I., Pechenkin, A. A., Yanenko, A. V.
Format: Conference Proceeding
Language:English
Subjects:
Cf-252
CMOS
heavy ions
laser
Laser modes
Layout
Logic gates
microprocessor
Microprocessors
Radiation effects
SEE
SOI
Transistors
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Summary:The results on SEE sensitivity of 0.5 μm SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and 252 Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques' accuracy improvement are discussed.
ISSN:0379-6566
DOI:10.1109/RADECS.2011.6131444