Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond

We successfully developed highly scalable and cost-effective PCRAM technology based on 0.007um 2 (4F2, 84nm pitch) sized novel cell scheme. The chip size and density are 33.207mm 2 and 1Gb. The device functionality and reliability were clearly demonstrated through fully integrated chip, which showed...

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Main Authors: Lee, S. H., Park, H. C., Kim, M. S., Kim, H. W., Choi, M. R., Lee, H. G., Seo, J. W., Kim, S. C., Kim, S. G., Hong, S. B., Lee, S. Y., Lee, J. U., Kim, Y. S., Kim, K. S., Kim, J. I., Lee, M. Y., Shin, H. S., Chae, S. J., Song, J. H., Yoon, H. S., Oh, J. M., Min, S. K., Lee, H. M., Hong, K. R., Cheong, J. T., Park, S. N., Ku, J. C., Sohn, Y. S., Park, S. K., Kim, T. S., Kim, Y. K., Park, K. W., Han, C. S., Kim, W., Kim, H. J., Choi, K. S., Lee, J. H., Hong, S. J.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Computer architecture
Microprocessors
Phase change random access memory
Programming
Resistance
Sensors
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Summary:We successfully developed highly scalable and cost-effective PCRAM technology based on 0.007um 2 (4F2, 84nm pitch) sized novel cell scheme. The chip size and density are 33.207mm 2 and 1Gb. The device functionality and reliability were clearly demonstrated through fully integrated chip, which showed a promising feasibility for productive NVM applications.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131480