A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm 2 , to a layer thickness of a...

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Bibliographic Details
Main Authors: Sammak, A., Aminian, M., Lin Qi, de Boer, W. B., Charbon, E., Nanver, L. K.
Format: Conference Proceeding
Language:English
Subjects:
Electric breakdown
Photodiodes
Photonics
Silicon
Surface treatment
Voltage measurement
Wavelength measurement
Online Access:Request full text
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Summary:A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm 2 , to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p + -region that can be metallized by Al. The resulting p + n diodes have exceptionally good I-V characteristics with ideality factors of ~1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1 μm in avalanche and Geiger modes.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131515